Effect of Annealing Temperature on F-doped TiO2 Spin Coated Thin Films

Authors: Sweta, L.P. Purohit, H.K. Malik, Vinod Kumar

DOI: https://doi.org/10.37082/IJIRMPS.v12.i3.230712

Short DOI: https://doi.org/gtz8nq

Country: India

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Abstract: TiO2 thin films are deposited on glass substrates by using the sol-gel dip coating technique. The annealing temperature was varied to investigate its effect on the surface morphology, structural, electrical, and optical properties of the film. The crystalline structure, surface morphology, and electrical properties were investigated by XRD, SEM, and four-point probe. The results show that with an increase in annealing temperature, the value of the intensity of (101) peak increases while the value of the full-width at half maximum decreases. Thin films deposited at high annealing temperatures result in higher absorbance and an increase in surface roughness and grain size. The electrical properties of these films show that the resistivity varies between 3.44×10^3 and 1.62×10^3 Ω cm when the annealing temperature changes from 350 to 550°C, respectively. The TiO2 thin films annealed at 900°C exhibited lower resistivity than other films. It found that the annealing temperature influences the surface morphology, structural, and electrical properties of TiO2 thin film.

Keywords: Sol-gel dip coating technique, Annealing temperature, Resistivity

Paper Id: 230712

Published On: 2024-06-21

Published In: Volume 12, Issue 3, May-June 2024

Cite This: Effect of Annealing Temperature on F-doped TiO2 Spin Coated Thin Films - Sweta, L.P. Purohit, H.K. Malik, Vinod Kumar - IJIRMPS Volume 12, Issue 3, May-June 2024. DOI 10.37082/IJIRMPS.v12.i3.230712

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