Explore the effect of annealing temperature on thickness and electrical properties of Y2O3 thick films

Authors: Upendra Devendra Lad

Country: India

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Abstract: In this study, screen-printed yttrium oxide (Y₂O₃) thick films were fabricated and annealed at three different temperatures, namely 100 °C, 200 °C, and 300 °C, for 3 hours in a closed muffle furnace to investigate the influence of annealing temperature on their thickness and electrical properties. The film thickness was measured using the mass difference method, while electrical resistivity was evaluated by the half-bridge technique. The results revealed that both thickness and resistivity of the films decreased with increasing annealing temperature, indicating enhanced densification and improved charge transport. The thickness of the films was found to reduce from 26 µm to 18 µm as the annealing temperature increased, while the resistivity decreased from 169435.2 Ω·m at 100 °C to 93013.4 Ω·m at 300 °C. The temperature coefficient of resistance (TCR) was also calculated and found to be -0.00343, -0.00217, and -0.00208 /°C for films annealed at 100, 200, and 300 °C, respectively, demonstrating a negative TCR characteristic. These findings confirm that annealing temperature has a significant impact on the structural densification and electrical performance of Y₂O₃ thick films, making it a crucial parameter for optimizing their functional properties for electronic applications.

Keywords: Screen-printed, annealing temperature, thickness, resistivity, TCR.

Paper Id: 232726

Published On: 2024-10-04

Published In: Volume 12, Issue 5, September-October 2024

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