Simple Chemical route to Prepared Nanostructured cobalt oxide (Co3O4) thin film for semiconductor applications

Authors: Ganesh V. More, C. S. Mahajan

Country: India

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Abstract: At a room temperature Cobalt oxide (Co3O4) thin film prepared by simple chemical technique i.e. (SILLAR technique) on the glass substrate, by an aqueous alkaline cobalt chloride source (CoCl2:6H2O) and double distilled water. The as-prepared thin film had observed brown in colour, with thickness is arond 250-270 nm. Further (Co3O4) thin film annealed at 200 oC up to 2 hour gradualy its colours changed from brown to black. The annealed Co3O4 thin film were subjected to structural characterization i.e. XRD diffraction which declared amorphous nature of metal oxide. Electrical characterization were carried by two probe electrical (dc) resistivity set up showed semiconductor behaviors, furthermore optical absorbance & energy band gap of these films were investigated by UV-spectroscopy which are helpful for nanostructure semiconductor electronic applications.

Keywords: Cobalt Oxide, Electrical, SILLAR, Optical, Thin films etc.

Paper Id: 232874

Published On: 2026-01-03

Published In: Volume 14, Issue 1, January-February 2026

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