International Journal of Innovative Research in Engineering & Multidisciplinary Physical Sciences
E-ISSN: 2349-7300Impact Factor - 9.907

A Widely Indexed Open Access Peer Reviewed Online Scholarly International Journal

Call for Paper Volume 12 Issue 2 March-April 2024 Submit your research for publication

Enhancement of Voltage and power Flow by Series FACTS devices Using TCSC and SSSC

Authors: Dr.Md. Rahman, Asaduzzaman

DOI: https://doi.org/10.17605/OSF.IO/5UHD6

Short DOI: https://doi.org/ggngs6

Country: India

Full-text Research PDF File:   View   |   Download


Abstract: In the recent year due to lack of new generation and an increase in the load causes the inadequate reactive power and thus it leads to voltage drops. The active power and reactive power can be controlled by using the FACTS devices for the enhancement of the stability of the power system. The Series FACTS devices are connected in series to the transmission line for the voltage profile improvement and as well as reducing the transmission line losses. The TCSC series facts device which controls the effective line reactance by connecting a variable reactance in series with a line, in the capacitive mode it injects the voltage in series to the transmission line thus is contributes better voltage profile. The SSSC is used for voltage stability improvement and it controls the active and reactive power. In this paper, the facts devices Thyristor Controlled Series Capacitor (TCSC) and Static Synchronous Series Compensator (SSSC) are taken and the performance of TCSC and SSSC are compared for the better voltage profile improvement, active power flow improvement, reduction of losses are analyzed by taking IEEE 14 Bus test system and developed on MATLAB/SIMULINK platform.

Keywords: TCSC, SSSC


Paper Id: 478

Published On: 2019-01-10

Published In: Volume 7, Issue 1, January-February 2019

Cite This: Enhancement of Voltage and power Flow by Series FACTS devices Using TCSC and SSSC - Dr.Md. Rahman, Asaduzzaman - IJIRMPS Volume 7, Issue 1, January-February 2019. DOI 10.17605/OSF.IO/5UHD6

Share this